Encapsulated Instrumented Substrate Apparatus for Acquiring Measurement Parameters in High Temperature Process Applications

ABSTRACT

An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. §119(e) to U.S.Provisional Patent Application Ser. No. 62/350,688 entitled WIRELESSSENSOR WAFER FOR HIGH TEMPERATURE EPI PROCESSES, filed Jun. 15, 2016,naming Mei Sun, Earl Jensen, Jing Zhou and Ran Liu as inventors, whichis incorporated herein by reference in the entirety.

TECHNICAL FIELD

The present invention generally relates to monitoring of wafers along asemiconductor process line, and, in particular, to a multiple stageenclosure assembly allowing for operation at high temperature.

BACKGROUND

As tolerances on process conditions in semiconductor device processingenvironments continue to narrow, the demand for improved processmonitoring systems continues to increase. Thermal uniformity within aprocessing system (e.g., epitaxy chamber) is one such condition. Currentmethods are unable to monitor temperature under the extreme conditions(e.g., high temperature) required of current processing techniqueswithout contaminating the associated chamber. Therefore, it would bedesirable to provide a system and method to allow for high temperaturemeasurement using an instrumented wafer to monitor the conditions of asemiconductor device processing line.

SUMMARY

An apparatus for acquiring measurement parameters in high temperatureprocess applications is disclosed, in accordance with one or moreembodiments of the present disclosure. In one embodiment, the apparatusincludes a substrate assembly including a bottom substrate and a topsubstrate. In another embodiment, the top substrate is mechanicallycoupled to the bottom substrate. In another embodiment, the apparatusincludes an electronic assembly. In another embodiment, the apparatusincludes a nested enclosure assembly including an outer enclosure and aninner enclosure. In another embodiment, the outer enclosure encloses theinner enclosure. In another embodiment, the inner enclosure encloses atleast the electronic assembly. In another embodiment, an insulatingmedium is disposed within a cavity between the outer surface of theinner enclosure and the inner surface of the outer enclosure. In anotherembodiment, the apparatus includes a sensor assembly communicativelycoupled to the electronic assembly. In another embodiment, the sensorassembly includes one or more sensors. In another embodiment, the one ormore sensors are disposed within the substrate assembly at one or morelocations across the substrate assembly. In another embodiment, the oneor more sensors are configured to acquire one or more measurementparameters at the one or more locations across the substrate assembly.In another embodiment, the electronic assembly is configured to receivethe one or more measurement parameters from the one or more sensors.

An apparatus for acquiring measurement parameters in high temperatureprocess applications is disclosed, in accordance with one or moreembodiments of the present disclosure. In one embodiment, the apparatusincludes a substrate assembly including a bottom substrate and a topcoating layer. In another embodiment, the apparatus includes anelectronic assembly. In another embodiment, the apparatus includes anested enclosure assembly that includes an outer enclosure and an innerenclosure. In another embodiment, the outer enclosure encloses the innerenclosure, wherein the inner enclosure encloses at least the electronicassembly. In another embodiment, an insulating medium is disposed withina cavity between the outer surface of the inner enclosure and the innersurface of the outer enclosure. In another embodiment a sensor assemblyis communicatively coupled to the electronic assembly, wherein thesensor assembly includes one or more sensors. In another embodiment, theone or more sensors are disposed on the bottom substrate of thesubstrate assembly at one or more locations across the bottom substrate,wherein the top coating layer at least coats the one or more sensorsdisposed on the bottom substrate. In another embodiment, the one or moresensors are configured to acquire one or more measurement parameters atthe one or more locations across the substrate assembly. In oneembodiment, the electronic assembly is configured to receive the one ormore measurement parameters from the one or more sensors.

A method for acquiring measurement parameters in high temperatureprocess applications is disclosed, in accordance with one or moreembodiments of the present disclosure. In one embodiment, the methodincludes acquiring a set of measurement parameters with one or moresensors distributed at one or more locations of a substrate assembly. Inanother embodiment, the method includes storing the set of measurementparameters in an electronic assembly disposed within a nested enclosureassembly. In another embodiment, the method includes calculating a valuefor each of the measurement parameters.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not necessarily restrictive of the invention as claimed. Theaccompanying drawings, which are incorporated in and constitute a partof the specification, illustrate embodiments of the invention andtogether with the general description, serve to explain the principlesof the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The numerous advantages of the disclosure may be better understood bythose skilled in the art by reference to the accompanying figures inwhich:

FIG. 1A is a top view of an instrumented substrate apparatus equippedwith a nested enclosure assembly, in accordance with one or moreembodiments of the present disclosure.

FIG. 1B is a simplified cross-sectional view of the nested enclosureassembly and instrumented substrate apparatus, in accordance with one ormore embodiments of the present disclosure.

FIG. 1C is a simplified cross-sectional view of the nested enclosureassembly and instrumented substrate apparatus, in accordance with one ormore embodiments of the present disclosure.

FIG. 1D is a simplified cross-sectional view of the nested enclosureassembly and instrumented substrate apparatus, in accordance with one ormore embodiments of the present disclosure.

FIG. 1E is a simplified cross-sectional view of the nested enclosureassembly and instrumented substrate apparatus, in accordance with one ormore embodiments of the present disclosure.

FIG. 1F is a simplified cross-sectional view of the nested enclosureassembly and instrumented substrate apparatus, in accordance with one ormore embodiments of the present disclosure.

FIG. 1G is a simplified cross-sectional view of the instrumentedsubstrate apparatus, in accordance with one or more embodiments of thepresent disclosure.

FIG. 1H is a simplified top view of an instrumented substrate apparatusconfigured with sensors, in accordance with one or more embodiments ofthe present disclosure.

FIG. 1I is a simplified top view of an instrumented substrate apparatusconfigured with sensors, in accordance with one or more embodiments ofthe present disclosure.

FIG. 1J is a simplified top view of an instrumented substrate apparatusconfigured with sensors, in accordance with one or more embodiments ofthe present disclosure.

FIG. 1K is a top view of an instrumented substrate apparatus placed incommunication with a remote data system, in accordance with one or moreembodiments of the present disclosure.

FIG. 1L is a block diagram view of the electronic assembly containedwithin the nested enclosure assembly, in accordance with one or moreembodiments of the present disclosure.

FIG. 2 is a block diagram of a process chamber including an instrumentedsubstrate apparatus, in accordance with one or more embodiments of thepresent disclosure.

FIG. 3 is a flow diagram illustrating a method for calculatingtemperatures across an instrumented substrate apparatus, in accordancewith one or more embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the subject matter disclosed,which is illustrated in the accompanying drawings.

Referring generally to FIGS. 1A through 3 a system and method formeasuring temperature across an instrumented substrate is described inaccordance with the present disclosure.

Embodiments of the present disclosure are directed to an instrumentedsubstrate apparatus capable of operating at high temperature (e.g., 600°C. to 800° C.). Such an instrumented substrate apparatus may be utilizedwith semiconductor processing chambers (e.g., epitaxy chamber) operatingat high temperature. In some embodiments, the instrumented substrateapparatus of the present disclosure includes a nested enclosure assemblyincluding a first and second enclosure (e.g., heat shield), whereby theon-board electronic assembly (i.e., electronic package) and/or othersensitive devices are housed within the nested enclosure assembly so asto maintain the temperature of the electronic assembly at or belowapproximately 150° C., even when the instrumented substrate apparatus isexposed to temperatures as high as 800° C. The use of an instrumentedsubstrate is described in U.S. patent application Ser. No. 15/277,753,filed on Sep. 27, 2016, which is incorporated herein by reference in theentirety.

FIGS. 1A-1B illustrate the instrumented substrate apparatus 100 foracquiring temperature across a substrate assembly 102, in accordancewith one or more embodiments of the present disclosure. FIG. 1Aillustrates a top view of an instrumented substrate apparatus 100equipped with a nested enclosure assembly 104, while FIGS. 1Billustrates a simplified cross-sectional view of the nested enclosureassembly 104 and instrumented substrate apparatus 100.

In one embodiment, the instrumented substrate apparatus 100 includes asubstrate assembly 102, a sensor assembly 105, and a nested enclosureassembly 104.

In one embodiment, the substrate assembly 102 includes a top substrate107 and a bottom substrate 109. For example, as shown in FIG. 1B, thetop substrate 107 may be mechanically coupled to the bottom substrate109. The top substrate 107 and/or the bottom substrate 109 of thesubstrate assembly 102 may include any substrate known in the art. Inone embodiment, the top substrate 107 and/or the bottom substrate 109 ofthe substrate assembly 102 includes a wafer. For example, the topsubstrate 107 and/or the bottom substrate 109 of the substrate assembly102 may include, but is not limited to, a glass wafer (e.g., fusedsilica glass wafer, borosilicate glass wafer, and the like), acrystalline wafer (e.g., crystalline quartz wafer or silicon wafer), ora wafer formed from one or more compounds (e.g., silicon carbide,silicon nitride and the like). For instance, the substrate assembly 102may include any substrate causing negligible contamination in asemiconductor processing environment, such as, but not limited to, awafer formed from one or more of silicon, silicon carbide, siliconnitride or silicon dioxide (e.g., quartz).

In one embodiment the lower substrate 109 is mechanically coupled to theupper substrate 107. For example, the lower substrate 109 may be weldedto the upper substrate 107. By way of another example, the lowersubstrate 109 may be bonded to the upper substrate 107. In anotherembodiment, one or more sensor substrates 135 are disposed between theupper substrate 107 and the lower substrate 109 so that the one or moresensor substrates 135 are sealed (e.g., hermetic seal) between the topand bottom substrates 107, 109. The one or more sensor substrates 135may be formed from any material known in the art. For example, the oneor more sensor substrates 135 may be formed from any suitable materialincluding, but not limited to, silicon, silicon carbide, siliconnitride, gallium nitride, gallium arsenide, germanium, or a compound ofgallium and indium. For instance, as shown in FIG. 1K, the one or moresensor substrates 135 may include, but are not limited to, one or moresilicon disks between the upper substrate 107 and the lower substrate109. It is noted herein that the one or more sensor substrates 135 maybe utilized to aid in thermal transfer and help replicate the variousmaterial properties (e.g., heat transfer, thermal expansion, opticalproperties and the like) of the type of substrate/wafer processed by thegiven process chamber during the studied process application. Thewireline 126 connections between the one or more sensors 124 and thenested enclosure assembly 104 may be sealed (e.g., hermetic seal) withinthe substrate assembly 102. For example, the wireline 126 connectionsbetween the one or more sensors 124 and the nested enclosure assembly104 are covered by the upper substrate 107, which is mechanicallycoupled to the lower substrate 109.

In one embodiment, the nested enclosure assembly 104 includes an innerenclosure 114 and an outer enclosure 116 as shown in FIG. 1B. Forexample, the inner enclosure 114 and outer enclosure 116 may consist ofan inner heat shield and an outer heat shield respectively. In anotherembodiment, the electronic assembly 125 (e.g., processor(s), memory,power source, communication circuitry and etc.) may be disposed withinthe inner enclosure 114, whereby the inner enclosure 114 is disposedwithin the outer enclosure 116 to form a nested enclosure structure.

In one embodiment, the inner enclosure 114 is formed from a materialhaving a high heat capacity (e.g., by volume). For example, the innerenclosure 114 may be formed from one or more metal alloys, such as, butnot limited to, an iron-nickel-cobalt alloy, a nickel-iron alloy, or aniron-carbon alloy. For instance, the inner enclosure 114 may be formedfrom one or more of the materials including KOVAR, INVAR, or stainlesssteel. In the case of the inner enclosure 114 being formed from KOVAR,the electronic assembly 125 (and the components of the electronicassembly 125) of the inner enclosure 114 closely follow the temperatureof the inner enclosure 114. By way of another example, the innerenclosure 114 may be formed from one or more crystalline materials, suchas, but not limited to, sapphire or crystalline quartz.

In another embodiment, the outer enclosure 116 is formed from one ormore materials including, but not limited to, a ceramic, a composite, ora glass. In another embodiment, the outer enclosure 116 is formed from amaterial causing negligible contamination. For example, the outerenclosure 116 may be formed from one or more low contamination materialsincluding, but not limited to, silicon, silicon carbide, siliconnitride, or silicon oxide.

In one embodiment, the inner enclosure 114 includes a lid 113 and a base115, whereby the lid 113 may be removed from the base 115 to allowaccess to the internal portion of the inner enclosure 114. In anotherembodiment, the outer enclosure 116 includes a lid 117 and a base 119,whereby the lid 117 is mechanically coupled to the base 119 to seal theouter enclosure 116. For example, a weld 121 may mechanically couple thelid 117 to the base 119 to seal (e.g., hermetic seal) the outerenclosure 116. By way of another example, the base 119 may be bonded tothe lid 117 to seal (e.g., hermetic seal) the outer enclosure 116 by anadhesive.

In another embodiment, the nested enclosure assembly 104 includes aninsulating medium 120 disposed between the inner enclosure 114 and outerenclosure 116. It is noted that the implementation of an insulatingmedium 120 between the inner and outer enclosures 114, 116 serves toreduce heat transfer from the elevated temperature environment (e.g.,semiconductor processing chamber) outside of the outer enclosure 116 tothe region within the inner enclosure 114. For example, an insulatingmedium 120 may be disposed within a cavity between the outer surface ofthe inner enclosure 114 and the inner surface of the outer enclosure116. In another embodiment, the insulating medium 120 may include, butis not limited to, a porous solid material. For example, the insulatingmedium 120 may be one or more aerogel materials (e.g., silica aerogelmaterial). For instance, an aerogel material can be formed with aporosity as high as approximately 98.5%. By way of another example, theinsulating medium 120 may be a ceramic material (e.g., porous ceramicmaterial). It is noted herein that during the sintering of aceramic-based insulating medium the porosity may be controlled throughthe use of pore formers. It is further noted herein that the porosity ofa ceramic material may be fabricated with a porosity range of 50-99%.For example, the porosity of a ceramic material may be fabricated tohave a porosity range between 95-99%.

In another embodiment, the insulating medium 120 is opaque. For example,the insulating medium 120 may include, but is not limited to, a materialthat is absorptive of radiation traversing the volume between the innersurface of the outer enclosure 116 and the outer surface of the innerenclosure 114. For instance, the insulating medium 120 may include, butis not limited to, a carbon-doped aerogel material.

In another embodiment, the insulating medium 120 is low pressure gas(i.e., gas held at vacuum pressure), whereby the gas is maintained at apressure less than ambient pressure (i.e., pressure of process chamber).In this regard, the volume between the outer surface of the innerenclosure 114 and the inner surface of the outer surface 116 may bemaintained at a vacuum pressure so as to minimize heat conduction fromthe outer enclosure 116 and the inner enclosure 114. In anotherembodiment, the insulating medium 120 is a gas maintained at pressureapproximately equal to ambient pressure, but less than atmosphericpressure. In another embodiment, the insulating medium 120 is a gasmaintained at pressure higher than ambient pressure, but less thanatmospheric pressure. For the purposes of the present disclosure,“vacuum pressure” is interpreted to mean any pressure that is lower thanambient pressure.

In one embodiment, the inner enclosure 114 is supported on the internalsurface of the outer enclosure 116 by the insulating medium 120. Forexample, the inner enclosure 114 may be supported on the internalsurface of the outer enclosure 116 by one or more aerogel materials. Forinstance, the inner enclosure 114 may be supported on the internalsurface of the outer enclosure 116 by a silica aerogel material.

In another embodiment, as shown in FIG. 1C, the inner enclosure 114 issupported by a layer 120 of low thermal conductivity medium disposed onthe internal bottom surface outer of enclosure 116. For example, thelayer of low thermal conductivity medium 120 may include one or moreporous materials. For instance, the layer of low thermal conductivitymedium 120 may include aerogel materials (e.g., silica aerogelmaterial). For further instance, the layer of low thermal conductivitymedium may be opaque (e.g., porous ceramic material).

In another embodiment, the outer enclosure 116 is supported on thesubstrate assembly 102 by one or more support structures 123. In anotherembodiment, the one or more support structures 123 (e.g., single supportleg, multiple support legs, platform) may be formed from a medium havinga low thermal conductivity coefficient so as to limit the heat transferbetween the substrate assembly 102 and the outer enclosure 116. Forexample, the one or more support structures 123 may be formed from a lowthermal conductivity medium such as, but not limited to, a ceramic, acomposite, a crystalline material or a glass. For instance, the one ormore support structures 123 may be formed from one or more materialsincluding, but not limited to, silicon, silicon carbide, siliconnitride, or silicon oxide. In another embodiment, the support structures123 are mechanically coupled to the outer enclosure 116 and the uppersubstrate 107. For example, a weld 121 may mechanically couple thesupport structures 123 to the outer enclosure 116 and the uppersubstrate 107. By way of another example, the support structures may bebonded to the outer enclosure 116 and the upper substrate 107. Inanother embodiment, one or more of the support structures 123 form oneor more passages through which one or more wirelines 126 connect thesensor assembly 105 to the electronic assembly 125. For example, one ormore of the support structures 123 may include, but are not limited to,one or more ring or tube structures (e.g., hollow leg structure) thatform one or more passages through which one or more wirelines 126connect the sensor assembly 105 to the electronic assembly 125. Further,a support structure 123 may be a ring structure that is coupled to theouter enclosure 116 and the upper substrate 107. For instance, a supportstructure 123 may be configured as a ring structure that is welded tothe outer enclosure 116 and the upper substrate 107 forming a seal(e.g., hermetic seal). By way of another instance, a support structure123 may be configured as a ring structure that is bonded to the outerenclosure 116 and the upper substrate 107 forming a seal (e.g., hermeticseal).

In another embodiment, the outer enclosure 116 is mechanically coupledto the substrate assembly 102, as shown in FIG. 1D. For example, theouter enclosure 116 is welded to the upper substrate 107 to form a seal(e.g., hermetic seal). By way of another example, the outer enclosure116 is bonded to the upper substrate 107 to form a seal (e.g., hermeticseal). It is noted herein that mechanically coupling the outer enclosure116 to the upper substrate 107 reduces the surface area of the outerenclosure 116 exposed to the process chamber.

In another embodiment, as shown in FIG. 1D, a low emissivity and/or highreflectivity layer 118 a (e.g., a coating) is disposed on the outersurface of the inner enclosure 114. In another embodiment, a lowemissivity and/or high reflectivity layer 118 b (e.g., a coating) isdisposed on the inner surface of the outer enclosure 116. In anotherembodiment, the low emissivity and/or high reflectivity layer 118 a isdisposed on the insulating medium 120 disposed next to the outer surfaceof the inner enclosure 114. In another embodiment, the low emissivityand/or high reflectivity layer 118 a is disposed on the insulatingmedium 120 disposed next to the inner surface of the outer enclosure116.

It is noted herein that, in the case of a high reflectivity layerdisposed next to the inner surface of the outer enclosure 116, the highreflectivity layer 118 b serves to reflect most of the thermal radiationfalling onto the outer enclosure 116 from the processing chamber wallsor any radiation lamp that may be present in the processing chamber.Further, the presence of a high reflectivity layer disposed next to theouter surface of the inner enclosure 114 serves to reflect most of thethermal radiation falling onto the inner enclosure 114 from the innersurface of the outer enclosure 116. In addition, the utilization of alow emissivity material disposed next to the inner surface of the outerenclosure 116 serves to reduce the amount of radiant thermal energyemitted by the outer enclosure 116, thereby reducing the amount ofavailable radiant thermal energy that could be absorbed by the innerenclosure 114. Further, the utilization of a low emissivity materialdisposed next to the inner surface of the outer enclosure 116 serves toreduce the amount of radiant thermal energy emitted by the innerenclosure 114, thereby reducing the amount of available radiant thermalenergy that could be absorbed and transferred to the electronic assembly125 within the inner enclosure 114.

In another embodiment, the layer 118 a and/or 118 b are highreflectivity and low emissivity materials such as, but not limited to,gold, silver, or aluminum. In another embodiment, the layer 118 a and/or118 b may be a high reflectivity and low emissivity material formed froma stacked dielectric film. For example, the layer 118 a and/or 118 b maybe a high reflectivity and low emissivity stacked dielectric film formedfrom materials including, but not limited to, an oxide, a carbide, or anitride.

Referring again to FIG. 1A, in one embodiment, the electronic assembly125 is coupled to the sensor assembly 105. In another embodiment, thesensor assembly 105 includes one or more sensors 124. In anotherembodiment, the sensors 124 may be disposed at one or more locationsacross the substrate assembly 102 and connected to the electronicassembly 125 via one or more wireline connections 126. In this regard,the one or more electronic assemblies 125 may acquire one or moremeasurement parameters (e.g., voltage from thermocouple, resistance fromresistance temperature device, voltage (or other signal) from a pressuresensor, voltage (or other signal) from a radiation sensor, voltage (orother signal) from a chemical sensor and the like) indicative of valuesfrom the one or more sensors 124 located at one or more locations of thesubstrate assembly 102. In another embodiment, the electronic assembly125 is communicatively coupled to a remote data system 103. In anotherembodiment the electronic assembly 125 transmits a plurality ofmeasurement parameters to a remote data system 103.

It is noted that the one or more sensors 124 may include any measurementdevice known in the art. For example, the one or more sensors 124 mayinclude, but are not limited to, a thermal sensor, pressure sensor, aradiation sensor and/or a chemical sensor. For instance, in the case oftemperature measurements, the one or more sensors 124 may include, butare not limited to, one or more thermocouple (TC) devices (e.g.,thermoelectric junction) or one or more resistance temperature devices(RTDs) (e.g., thin film RTD). In another instance, in the case ofpressure measurements, the one or more sensors 124 may include, but arenot limited to, a piezoelectric sensor, a capacitive sensor, an opticalsensor, a potentiometric sensor and the like. In another instance, inthe case of radiation measurements, the one or more sensors may include,but are not limited to, one or more light detectors (e.g., photovoltaiccell, photoresistor and the like) or other radiation detectors (e.g.,solid state detector). In another instance, in the case of chemicalmeasurements, the one or more sensors 124 may include, but are notlimited to, one or more chemiresistors, gas sensors, pH sensors and thelike.

In another embodiment, the instrumented substrate apparatus 100 includesa dummy enclosure assembly 108. For example, a dummy enclosure assembly108 may be placed at a selected position on the substrate assembly 102so as to serve as a counterbalance weight to offset the weight of thenested enclosure assembly 104. For instance, the dummy enclosureassembly 108 may be placed opposite to the nested enclosure assembly 104at the same distance from the center of the substrate assembly 102 asthe nested enclosure assembly 104. It is noted herein that placement ofthe dummy enclosure assembly 108 at a position opposite of the nestedenclosure assembly 104 serves to maintain the center of mass of theinstrumented substrate apparatus 100 at the center of the substrateassembly 102. In another embodiment, although not shown, the nestedenclosure assembly 104 may be positioned at the center of the substrateassembly 102 so as to maintain the center of mass of the instrumentedsubstrate apparatus 100 at the center of the substrate assembly 102.

FIG. 1E is a simplified cross-sectional view of the nested enclosureassembly 104 and instrumented substrate apparatus 100. In oneembodiment, the outer enclosure 116 is formed as one part (e.g., cupstructure). For example, the outer enclosure 116 may be formed from asingle piece of fused silica glass. In one embodiment, the one pieceouter enclosure 116 is mechanically coupled to the substrate assembly102. For example, the one piece outer enclosure 116 may be welded orbonded to the upper substrate 107. It is noted that construction of theouter enclosure 116 in a single piece provides a reduced profile for theinstrumented substrate apparatus 100.

FIG. 1F is a simplified cross-sectional view of the nested enclosureassembly 104 and instrumented substrate apparatus 100. In oneembodiment, a central portion of the upper substrate 107 is removed. Inanother embodiment, an additional layer of insulating medium 140 may bedisposed on the bottom substrate 109 and in the central portion of theupper substrate 107 to provide additional thermal insulation. Inaddition, an additional layer of high reflectivity material 142 may bedisposed between the additional insulating medium material 140 and thebottom substrate 109, whereby the high reflectivity material 142 and theinsulating material 140 fill the central portion region of the uppersubstrate 107.

FIG. 1G is a simplified cross-sectional view of a portion of theinstrumented substrate apparatus 100, in accordance with one or moreembodiments of the present disclosure. In one embodiment, the one ormore sensors 124 and sensor substrates 135 are sealed between the uppersubstrate 107 and the lower substrate 109. For example, the sensors 124and sensor substrates 135 are sealed (e.g., hermetic seal) inside thesubstrate assembly 102 preventing exposure to the process chamber gases136 (e.g., nitrogen, helium and the like).

It is noted that the sensor substrates 135 may be formed so as to haveany shape and be distributed in any manner across the bottom substrate109. FIGS. 1H-1J illustrate a number of substrate sensorsconfigurations, in accordance with one or more embodiments of thepresent disclosure. For purposes of simplicity, the top substrate (107in other drawings) is not depicted in FIGS. 1H-1J. As shown in FIG. 1H,in one embodiment, a set of substrate assemblies 135 are distributedacross the bottom substrate 109 in a selected geometric pattern (e.g.,cross-shape as shown in FIG. 1H). Further, one or more sensors 124 maybe disposed on, in or under each of the sensor substrates 135.

As shown in FIG. 1I, in another embodiment, one or more sensorsubstrates 135 are configured as a ring disposed between the lowersubstrate 109 and the upper substrate 107 (upper substrate not shown forclarity). For example, as depicted in FIG. 1I, the medium set of sensorsubstrates 135 may be configured in concentric rings of various sizesdisposed on the bottom substrate 109. Further, one or more sensors 124may be disposed on, in or under each of the ring sensor substrates 135.

As shown in FIG. 1J, in another embodiment, a single sensor substrate135 may be disposed on the bottom substrate 109, with one or moresensors 124 disposed on the sensor substrate 135. For example, as shownin FIG. 1J, a sensor substrate 135 may be shaped as a disk with acentral portion removed.

It is noted that the arrangement and number of sensor substrates 135 andsensors 124 depicted above are not limiting and are provided merely forillustrated purposes. Rather, it is recognized herein that the one ormore sensor substrates 135 and/or one or more sensors 124 of the presentdisclosure may be configured in a number of patterns, shapes andquantities.

Further, while much of the present disclosure has focused on animplementation of the instrumented substrate apparatus 100 equipped witha top substrate, this configuration is not a limitation on the scope ofthe present disclosure. Rather, the scope of the present disclosure maybe extended to a number of equivalent embodiments. For example,referring again to FIGS. 1A and 1B, the top substrate 107 of thesubstrate assembly 102 may be replaced with a top coating material. Forinstance, the one or more sensor substrates 135 and/or one or moresensors 124 may be disposed on a bottom substrate 109. After placementof the one or more sensor substrates 135 and/or one or more sensors 124a coating material may be applied to the bottom substrate 109, the oneor more substrates 135 and/or the one or more sensors 124 therebysealing at least the one or more sensors 124. For example, the coatingmaterial may form a high reflectivity and low emissivity thin film, suchas, but not limited to, a silicon dioxide thin film, over the bottomsubstrate 109, the one or more substrates 135 and/or the one or moresensors 124.

FIG. 1K illustrates an instrumented substrate assembly system 150including the instrumented substrate apparatus 100 and a remote datasystem 103. In one embodiment, the one or more electronic assemblies 125are wirelessly communicatively coupled to the remote data system 103.The one or more electronic assemblies 125 may be wirelesslycommunicatively coupled to the remote data system 103 in any suitablemanner. For example, the instrumented substrate apparatus 100 mayinclude communication circuitry 106. The communication circuitry 106 mayinclude any communication circuitry and/or communication device known inthe art of communication. For instance, the communication circuitry 106may include, but is not limited to, one or more communication antennas(e.g., communication coil). In one embodiment, the communicationcircuitry 106 is configured to establish a communication link betweenthe electronic assembly 125 and the off-substrate remote data system103. Further, the communication circuitry 106 is communicatively coupledto the electronic assembly 125 (e.g., coupled via electricalinterconnect 127). In this regard, the electronic assembly 125 maytransmit one or more signals indicative of the measurement parametersacquired by the one or more sensors 124 to the communication circuitry106 via one or more interconnects 127. In turn, the communicationcircuitry 106 may relay one or more signals indicative of themeasurement parameters to the remote data system 103. In one embodiment,the remote data system 103 includes communication circuitry 132 suitablefor establishing the communication link between the on-substratecommunication circuitry 106 and the remote data system 103. For example,the communication circuitry 132 may establish the communication linkbetween the on-substrate communication circuitry 106 and the remote datasystem 103 using a radio frequency (RF) signal. As discussed furtherherein, the values associated with the sensor measurements may becalculated by the electronic assembly 125 and/or the remote data system103.

In one embodiment, the electronic assembly 125 calculates one or morevalues based on the one or more measurement parameters acquired by theone or more sensors 124. In turn, the electronic assembly 125 maytransmit the calculated values to the remote data system 103. In anotherembodiment, the values are calculated by the remote data system 103. Inthis regard, the electronic assembly 125 transmits one or moremeasurement parameters to the remote data system 103. In turn, theremote data system 103 may calculate one or more values based on the oneor more measurement parameters acquired by the sensors 124.

In another embodiment, the remote data system 103 maps (or correlates)the one or more values calculated by the electronic assembly 125 or theremote data system 103 based on the one or more signals acquired bysensors 124 to the position of acquisition on the substrate assembly102. In another embodiment, the remote data system 103 reports themapped values to a user interface. For example, the remote data system103 may report mapped values to one or more of a desktop computer,laptop, tablet, handheld device, memory or a server.

FIG. 1L illustrates a block diagram of the electronic assembly 125contained within the nested enclosure assembly 104, in accordance withone or more embodiments of the present disclosure. In one embodiment,the electronic assembly 125 includes a power source 112 (e.g., one ormore batteries). In another embodiment, the electronic assembly 125includes one or more processors 129. In another embodiment, theelectronic assembly 125 includes communication circuitry 128. In anotherembodiment, the electronic assembly 125 may include a memory medium 131(e.g., memory) for storing the program instructions to configure the oneor more processors 128. Further, the measurement parameters acquired bythe electronic assembly 125 enclosed within the nested enclosureassembly 104 may be stored in memory 131 of the electronic assembly 125.For the purposes of the present disclosure, the term ‘processor’ may bebroadly defined to encompass any device having one or more processors(e.g., CPU) or logic elements (e.g., ASICs), which execute instructionsfrom a memory medium 131. In this sense, the one or more processors 129of the electronic assembly 125 may include any microprocessor-type orlogic device configured to execute algorithms and/or instructions. Itshould be recognized that the steps described throughout the presentdisclosure may be carried out by a single processor or, alternatively,multiple processors. The memory medium 131 may include a read-onlymemory, a random access memory, a solid state drive, flash, EPROM,EEPROM, and the like.

FIG. 2 illustrates a process chamber configured with an instrumentedsubstrate apparatus 100, in accordance with one or more embodiments ofthe present disclosure. In one embodiment, the instrumented substrateapparatus 100 is disposed on a rotatable platform 138. In anotherembodiment, process chamber gases 136 flow over the substrate assembly102. For example, as previously discussed, the instrumented substrateassembly 102 is sealed (e.g., hermetic seal) so process chamber gases136 do not enter the substrate assembly 102. In another embodiment, oneor more heating sources 134 are used to heat the process chamber. Forexample, heating lamps above and below the instrumented substrateapparatus 100 heat the process chamber.

FIG. 3 illustrates a flow diagram depicting a method 300 of acquiringmeasurement parameters across a substrate, in accordance with one ormore embodiments of the present disclosure. It is noted herein that thesteps of the flow diagram in FIG. 3 are not to be interpreted aslimiting and are provided merely for illustrative purposes.

In one embodiment, the process starts at step 302. In step 304, theprocess includes measuring a set of measurement parameters (e.g., TCvoltage, RTD resistance and the like) at a set of sensors 124 disposedabout the substrate assembly 102 at a set of locations. Then, in step306, after the measurement parameters are measured, the results arestored in memory (e.g., memory 131 of electronic assembly 125) enclosedin the nested enclosure 104. In step 308, the set of measurementparameters are transmitted to the remote data system 103. For example,the measurement data may be wirelessly transmitted from the electronicassembly 125 to the remote data system 103 via communication circuitry106 (e.g., communication antenna) by a radio frequency (RF) signal. Instep 310, a value is calculated by the remote data system 103 for eachof the measurement parameters acquired by each of the sensors 124disposed at each of the locations of the substrate assembly 102. Forexample, in the case of temperature, the value associated with one ofthe sensors 124 may be calculated based on a parameter indicative oftemperature measured at that sensor. It is noted herein that the resultsfor each of the sensors 124 may then be mapped to the surface of thesubstrate assembly 102. For example, the remote data system 103 (oranother data system) may correlate the values measured by each sensor ofthe set of sensors 124. Then, based on the known position of each of thesensors 124 the remote data system 103 can form a database and/or map ofthe values at the top surface of the substrate assembly 102 as afunction of position in the plane of the top surface (e.g., X-Yposition) of the substrate assembly 102. In another embodiment, thedatabase and/or map of values is presented on a display of a userinterface (not shown). In step 312, the process ends.

It is recognized that the steps of the method 300 may be carried out viasystem 150. It should, however, be recognized that the system 150 shouldnot be interpreted as a limitation on process 300 or the method ofmeasuring values across a substrate assembly 102 as it is contemplatedthat a variety of processes may be carried out by system 150 resultingin a plurality of process flows to acquire measurements and determinevalues at a plurality of locations on a substrate assembly 102. Forexample, after measurement parameters have been acquired for all of theone or more sensors 124 the electronic assembly 125 may calculate avalue for each measurement parameter acquired by the one or more sensors124.

The herein described subject matter sometimes illustrates differentcomponents contained within, or connected with, other components. It isto be understood that such depicted architectures are merely exemplary,and that in fact many other architectures can be implemented whichachieve the same functionality. In a conceptual sense, any arrangementof components to achieve the same functionality is effectively“associated” such that the desired functionality is achieved. Hence, anytwo components herein combined to achieve a particular functionality canbe seen as “associated with” each other such that the desiredfunctionality is achieved, irrespective of architectures or intermedialcomponents. Likewise, any two components so associated can also beviewed as being “connected”, or “coupled”, to each other to achieve thedesired functionality, and any two components capable of being soassociated can also be viewed as being “couplable”, to each other toachieve the desired functionality. Specific examples of couplableinclude but are not limited to physically interactable and/or physicallyinteracting components and/or wirelessly interactable and/or wirelesslyinteracting components and/or logically interactable and/or logicallyinteracting components.

It is believed that the present disclosure and many of its attendantadvantages will be understood by the foregoing description, and it willbe apparent that various changes may be made in the form, constructionand arrangement of the components without departing from the disclosedsubject matter or without sacrificing all of its material advantages.The form described is merely explanatory, and it is the intention of thefollowing claims to encompass and include such changes. Furthermore, itis to be understood that the invention is defined by the appendedclaims.

What is claimed:
 1. An apparatus comprising: a substrate assemblyincluding a bottom substrate and a top substrate, wherein the topsubstrate is mechanically coupled to the bottom substrate; an electronicassembly; a nested enclosure assembly including an outer enclosure andan inner enclosure, wherein the outer enclosure encloses the innerenclosure, wherein the inner enclosure encloses at least the electronicassembly; an insulating medium disposed within a cavity between theouter surface of the inner enclosure and the inner surface of the outerenclosure; and a sensor assembly communicatively coupled to theelectronic assembly, wherein the sensor assembly includes one or moresensors, the one or more sensors disposed within the substrate assemblyat one or more locations across the substrate assembly, wherein the oneor more sensors are configured to acquire one or more measurementparameters at the one or more locations across the substrate assembly,wherein the electronic assembly is configured to receive the one or moremeasurement parameters from the one or more sensors.
 2. The apparatus ofclaim 1, wherein the one or more sensors comprise: one or moretemperature sensors configured to acquire one or more parametersindicative of temperature.
 3. The apparatus of claim 2, wherein the oneor more thermal sensors comprise: one or more thermocouple devices. 4.The apparatus of claim 2, wherein the one or more thermal sensorscomprise: one or more resistance temperature devices.
 5. The apparatusof claim 1, wherein the one or more sensors comprise: one or morepressure sensors configured to acquire one or more parameters indicativeof pressure.
 6. The apparatus of claim 1, wherein the one or moresensors comprise: one or more chemical sensors configured to acquire oneor more parameters indicative of a presence of a targeted chemical. 7.The apparatus of claim 1, wherein the one or more sensors comprise: oneor more radiation sensors configured to acquire one or more parametersindicative of a presence of radiation.
 8. The apparatus of claim 1,wherein the one or more sensors are coated with a high reflectivitymaterial.
 9. The apparatus of claim 1, wherein at least one of thebottom substrate or the top substrate are formed from at least one of aceramic, a cermet, a crystalline material or a glass.
 10. The apparatusof claim 9, wherein at least one of the bottom substrate or the topsubstrate are formed from at least one of silicon, silicon carbide,silicon nitride or silicon dioxide.
 11. The apparatus of claim 1,wherein the bottom substrate and the top substrate are sealed by atleast one of welding or bonding.
 12. The apparatus of claim 1, whereinthe enclosure assembly is mechanically coupled to the substrateassembly.
 13. The apparatus of claim 12, wherein the enclosure assemblyis sealed to the substrate assembly by at least one of welding orbonding.
 14. The apparatus of claim 1, wherein the electronic assemblycomprises: one or more processors; communication circuitry; memory; anda power source.
 15. The apparatus of claim 1, wherein the apparatus isdisposed on a rotatable platform.
 16. The apparatus of claim 1, furthercomprising: a dummy enclosure assembly, wherein the dummy enclosureassembly is disposed at a position on the substrate assembly to maintaina center of mass of the apparatus at a center of the substrate assembly.17. The apparatus of claim 1, wherein each of the one or more sensorsare disposed on or within a sensor substrate, wherein the sensorsubstrate is disposed between the bottom substrate and the top substrateof the substrate assembly.
 18. The apparatus of claim 17, wherein thesensor substrate comprises: at least one of, a silicon substrate, asilicon carbide substrate, a silicon nitride substrate, a galliumnitride substrate, a gallium arsenide substrate, a germanium substrate,or a substrate of gallium and indium.
 19. The apparatus of claim 1,wherein the insulating medium comprises: a porous solid material. 20.The apparatus of claim 19, wherein the insulating medium is opaque. 21.The apparatus of claim 20, wherein the insulating medium is absorptive.22. The apparatus of claim 19, wherein the insulating medium comprises:an aerogel.
 23. The apparatus of claim 19, wherein the insulating mediumcomprises: a ceramic material.
 24. The apparatus of claim 1, wherein theinsulating medium comprises: one or more gases.
 25. The apparatus ofclaim 24, wherein the one or more gases is maintained at a pressure lessthan atmospheric pressure.
 26. The apparatus of claim 25, wherein theone or more gases is maintained at a pressure less than ambientpressure.
 27. The apparatus of claim 1, further comprising: one or moresupport structures supporting the inner enclosure on the internalsurface of the outer enclosure.
 28. The apparatus of claim 27, whereinthe one or more support structures are formed from a thermal insulatingmaterial.
 29. The apparatus of claim 1, further comprising: a layer ofthermal insulating material disposed between an outer surface of abottom portion of the inner enclosure and an inner surface of a bottomportion of the outer enclosure.
 30. The apparatus of claim 1, furthercomprising: one or more support structures for supporting the outerenclosure on the substrate.
 31. The apparatus of claim 1, wherein theinner enclosure is formed from a material having a heat capacity above aselected value.
 32. The apparatus of claim 1, wherein the innerenclosure is formed from at least one of a metal, an alloy, or acomposite.
 33. The apparatus of claim 32, wherein the inner enclosure isformed from at least one of an iron-nickel-cobalt alloy, an iron-nickelalloy, or an iron-carbon alloy.
 34. The apparatus of claim 1, whereinthe inner enclosure is formed from one or more crystalline materials.35. The apparatus of claim 34, wherein the inner enclosure is formedfrom at least one of sapphire or crystalline quartz.
 36. The apparatusof claim 1, wherein the outer enclosure is formed from at least one of aceramic, a cermet, a crystalline material or a glass.
 37. The apparatusof claim 1, wherein the outer enclosure is formed from a material havinga contamination rate below a selected level.
 38. The apparatus of claim37, wherein the outer enclosure is formed from at least one of silicon,silicon carbide, silicon nitride or silicon dioxide.
 39. The apparatusof claim 1, further comprising: at least one of a high reflectivitylayer disposed on the outer surface of the inner enclosure, or a highreflectivity layer disposed on the inner surface of the outer enclosure,or between the inner surface of the outer enclosure and the outersurface of the inner enclosure.
 40. The apparatus of claim 39, whereinthe high reflectivity layer includes at least one of gold, silver oraluminum.
 41. The apparatus of claim 39, wherein the high reflectivitylayer is a stacked dielectric film comprising at least one of an oxide,a nitride or a carbide.
 42. The apparatus of claim 1, wherein theelectronic assembly is configured to calculate one or more \values fromthe one or more acquired measurement parameters.
 43. The apparatus ofclaim 1, further comprising: a remote data system communicativelycoupled to the electronic assembly, wherein the electronic assembly isconfigured to transmit the one or more measurement parameters to theremote data system, wherein the remote data system is configured tocalculate a value from the one or more acquired measurement parametersacquired by the one or more sensors.
 44. The apparatus of claim 43,wherein the remote data assembly is configured to map the one or morevalues to the one or more locations of the substrate.
 45. The apparatusof claim 43, wherein the remote data assembly is configured to reportthe mapped one or more values to a user interface.
 46. An apparatuscomprising: a substrate assembly including a bottom substrate and a topcoating layer; an electronic assembly; a nested enclosure assemblyincluding an outer enclosure and an inner enclosure, wherein the outerenclosure encloses the inner enclosure, wherein the inner enclosureencloses at least the electronic assembly; an insulating medium disposedwithin a cavity between the outer surface of the inner enclosure and theinner surface of the outer enclosure; and a sensor assemblycommunicatively coupled to the electronic assembly, wherein the sensorassembly includes one or more sensors, the one or more sensors disposedon the bottom substrate of the substrate assembly at one or morelocations across the bottom substrate, wherein the top coating layer atleast coats the one or more sensors disposed on the bottom substrate,wherein the one or more sensors are configured to acquire one or moremeasurement parameters at the one or more locations across the substrateassembly, wherein the electronic assembly is configured to receive theone or more measurement parameters from the one or more sensors.
 47. Amethod comprising: acquiring a set of measurement parameters with one ormore sensors distributed at one or more locations of a substrateassembly; storing the set of measurement parameters in an electronicassembly disposed within an nested enclosure assembly; and calculating avalue for each of the measurement.